Monday, March 18, 2013

Next-generation nonvolatile memory called Phase-Change Random Access Memory (PRAM)

A future improvement over flash memory, next-generation nonvolatile memory called Phase-Change Random Access Memory (PRAM), has a operating speed of 1,000 times faster than that of flash memory.

"PRAM uses reversible phase changes between the crystalline (low resistance) and amorphous (high resistance) state of chalcogenide materials, which corresponds to the data "0" and "1," respectively. Although PRAM has been partially commercialized up to 512 Mb by Samsung Electronics Co., Ltd., its writing current should be decreased by at least one-third of its present level for the mass production of mobile electronics applications. A team of Professors Keon Jae Lee and Yeon Sik Jung in the Department of Materials Science and Engineering at KAIST has developed phase-change memory with low power consumption (below 1/20th of its present level) by employing self-assembled block copolymer (BCP) silica nanostructures. Their work was published under the title "Self-Assembled Incorporation of Modulated Block Copolymer Nanostructures in Phase-Change Memory for Switching Power Reduction" in the March issue of ACS Nano."

Read more at: Phys.Org Nanotech News


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